devas@nano.cnr.it
CnrNano research on Advanced Funct. Materials cover  

Pisa Modena - 17.01.2019 - CnrNano research on Advanced Funct. Materials cover
Nest (CnrNano and SNS) researchers got the Front Inside Cover of the Advanced Funct. Materials, the Juanuary 15th issue. In the article Field Effect Transistors: Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors , Francesco Rossella and coworkers describe a single n?type InAs nanowire, electrically contacted, which is surrounded by an ionic liquid – a neutral ensemble of positive and negative ions, liquid at room temperature. A large metallic electrode forces the positive ions to wrap the nanowire. The resulting electric field induces electron accumulation in the nanowire. The ionic liquid gating outstandingly drives the nanowire based field effect transistor.

Read the article Field Effect Transistors: Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors


Link https://onlinelibrary.wiley.com/toc/16163028/2019/29/3

 


Valid XHTML 1.0 Transitional