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Stefan Heun

CNR Senior Researcher

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fax +39 050 509550

stefan.heunnano.cnr .it


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NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore
Piazza San Silvestro 12, 56127 Pisa, Italy

Running projects

ERC Phosfun.

Graphene Flagship, WP12 Energy Storage.

Ministry of Foreign Affairs and International Cooperation Italy - Ministry of Science and Higher Education, Poland.

CNR Italy - RFBR Russia, CNRS France, NRF Korea.

Research interests

My main research interest is the physics of low-dimensional systems. This includes three aspects: (i) the synthesis of nanostructures, (ii) the manipulation of samples on the nanometer-scale, and (iii) their characterization with spatially resolved spectroscopic techniques.

Biographical sketch

Stefan Heun received his diploma in physics in 1989 from the University of Hannover (Germany), where he investigated, in the group of Prof. M. Henzler, the initial stages of epitaxial growth of silicon on Si(100). In 1993 he received his Ph.D. in the same group, working on the magnetoconductivity of monolayer-thin films of Ag, Pb, and Au deposited on Si(111).

In 1993 he joined the Interdisciplinary Research Laboratories of the Japanese Telecom NTT in Tokyo (Japan), where he studied the surface passivation of III-V semiconductors using synchrotron radiation.

In 1995 he moved as a TMR Marie Curie research fellow to the Materials Division of the TASC lab in Trieste (Italy), where he worked on the engineering of heterostructure interfaces.

In 1997 he became a beam line scientist at the Sincrotrone Trieste, where he was appointed responsible of the Nanospectroscopy Beamline, at which he also performed his research on the properties of low-dimensional systems.

Finally, in 2004 he joined the CNR as a senior scientist, first at TASC in Trieste and since October 2006 at NEST in Pisa (Italy). In these last years his work focuses on the use of scanning probe microscopy, in particular scanning gate microscopy (SGM) and scanning tunneling microscopy (STM), for the study of semiconductor and graphene nanostructures.

Stefan Heun has co-authored more than 135 papers and has given more than 85 invited presentations and seminars. h-index: 26.

Selected publications

S. Xiang, V. Miseikis, L. Planat, S. Guiducci, S. Roddaro, C. Coletti, F. Beltram, and S. Heun: Low-temperature quantum transport in CVD-grown single crystal graphene, Nano Research 9, 1823 (2016).

A. Mrenca-Kolasinska, S. Heun, and B. Szafran: Aharonov-Bohm interferometer based on n-p junctions in graphene nanoribbons, Phys. Rev. B 93, 125411 (2016).

M. Serrano-Ruiz, M. Caporali, A. Ienco, V. Piazza, S. Heun, and M. Peruzzini: The role of water in the preparation and stabilization of high-quality phosphorene flakes, Adv. Mater. Interfaces 3 (2016) 1500441.

K. Bennaceur, J. Guillemette, P. L. Lévesque, N. Cottenye, F. Mahvash, N. Hemsworth, A. Kumar, Y. Murata, S. Heun, M. O. Goerbig, C. Proust, M. Siaj, R. Martel, G. Gervais, and T. Szkopek: Measurement of topological Berry phase in highly disordered graphene, Phys. Rev. B 92 (2015) 125410.

A. Iagallo, S. Tanabe, S. Roddaro, M. Takamura, Y. Sekine, H. Hibino, V. Miseikis, C. Coletti, V. Piazza, F. Beltram, and S. Heun: Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene, Semicond. Sci. Technol. 30 (2015) 055007.

A. Iagallo, N. Paradiso, S. Roddaro, C. Reichl, W. Wegscheider, G. Biasiol, L. Sorba, F. Beltram, and S. Heun: Scanning gate imaging of quantum point contacts and the origin of the 0.7 anomaly, Nano Research 8 (2015) 948 – 956.

T. Mashoff, D. Convertino, V. Miseikis, C. Coletti, V. Piazza, V. Tozzini, F. Beltram, and S. Heun: Increasing the active surface of titanium islands on graphene by nitrogen sputtering, Appl. Phys. Lett. 106, (2015) 083901.

V. Miseikis, D. Convertino, N. Mishra, M. Gemmi, T. Mashoff, S. Heun, N. Haghighian, F. Bisio, M. Canepa, V. Piazza, and C. Coletti: Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor, 2D Mater. 2 (2015) 014006.

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