Speaker | |
Affiliation | Cnr Nano S3 |
Date | 2022-05-05 |
Time | 15:00 |
Venue | |
Host | Massimo Rontani |
Amorphous chalcogenides, such as GexSe1-x, have been proposed as good ovonic switch material candidates for nonvolatile memory and selector devices due to their fast switching, endurance and higher crystallization temperature with respect to standard GST compounds. The structural and electrical properties of GexSe1-x, as for other chalcogenides, are strongly related to the presence of short- and medium-range structures in the amorphous phase that are responsible for the internal structural orders at different length-scales1,2. In order to deeply understand the local geometry-dependent properties of these chalcogenides systems, we employed a combined approach based on both classical molecular dynamics (MD) simulations, innovative analysis techniques3 and ab-initio simulations.
We obtained different information about the nature of the order in these amorphous systems demonstrating that little changes in the stoichiometry greatly affect the GexSe1-x structural and electrical properties and that short- and medium-range order are intrinsically interconnected each other.
The seminar is realized in the framework of the funded project "INTERSECT" H2020 Grant n. 814487".
References
Istituto Nanoscienze
Consiglio Nazionale delle Ricerche
PEC: protocollo.nano@pec.cnr.it
Partita IVA 02118311006
Piazza San Silvestro 12
56127 Pisa, Italy
phone +39 050 509418
fax +39 050 509550
Istituto Nanoscienze Consiglio Nazionale delle Ricerche
Piazza San Silvestro 12, I
56127 Pisa
phone +39 050 509525/418
fax +39 050 509550
via Campi 213/A, I
41125 Modena 7
phone +39 059 2055629
fax +39 059 2055651″
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