After my graduation at Università Milano-Bicocca in Condensed Matter Physics, I moved to CNR-IMM unit of Agrate Brianza for my PhD on quantum transport in silicon transistors under the supervision of Dr. Enrico Prati and Prof. Marco Fanciulli. Next, I joined the group of Silvano De Franceschi at CEA Grenoble (France) to investigate novel techniques for coherent manipulation and efficient, scalability-compatible techniques of readout for hole spin qubits. Then I moved to IST Austria working in the team of Georgios Katsaros to interface Ge-based spin qubits with single photons trapped in superconducting transmission-line resonators. In this framework, I worked also on Josephson Junctions obtained by proximization of Ge quantum wells. Currently I’m a permanent researcher at NEST collaborating with the group of Francesco Giazotto. My goals remain the study of hybrid semi-super devices and novel techniques of gate control on all-metallic superconducting nanowires for applications on quantum and classical computing.
The main reason for which I joined academic research is the possibility of having experimental observations of the intriguing, counter-intuitive phenomena of quantum mechanics. Since the master thesis my interests have been focused on semiconductor nanodevices, as well as related topics of practical support like ultra-low noise electronics, cryogenics and software development. I’ve been working on Si quantum dots both for fundamental research, like valley-mediated Kondo physics, and from more applicative sides, such as qubit development for quantum computing. In particular, I studied how you can formalize the effect of electrical spin coherent driving in hole quantum dots, where a sizable spin-orbit coupling connects the spin states of single holes with external electric fields. I also investigated the spin readout technique of gate reflectometry, a powerful tool of spin sensing which avoids the need of dedicated additional devices. As of now I’m working to realize a Ge-based superconducting qubit in collaboration with IST Austria. Together with the possibility of creating a gate-tunable all-metallic transmon device, this perspective is what I’m focusing on currently.
“Gate-reflectometry dispersive readout of a spin qubit in silicon”, Crippa A., R. Ezzouch, A. Aprà, A. Amisse, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi, Nature communications, 10(1), 1-6 (2019).
“Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits”, Crippa A., R. Maurand, L. Bourdet, D. Kotekar-Patil, A. Amisse, X. Jehl, M. Sanquer, R. Laviéville, H. Bohuslavskyi, L. Hutin, S. Barraud, M. Vinet, Y. Niquet, S. De Franceschi, Phys. Rev. Lett. 120, 137702 (2018).
“Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry”, Crippa A., R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. O. Orlov, P. Fay, R. Laviéville, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi, X. Jehl, Nano Lett. 17, 1001 (2017).
“Valley blockade and multielectron spin-valley Kondo effect in silicon”, Crippa A., M. L. V. Tagliaferri, D. Rotta, M. De Michielis, G. Mazzeo, M. Fanciulli, R. Wacquez, M. Vinet, E. Prati, Phys. Rev. B 92, 035424 (2015).
“Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices”, L. V. Tagliaferri*, A. Crippa A., S. Cocco, M. De Michielis, M. Fanciulli, G. Ferrari, E. Prati, IEEE Trans. Instrumentation and Measurement, 65(8), 1827-1835 (2016) [ * = equal contribution].
“Capacitance Spectroscopy in Single-Charge Devices”, Crippa A., M. L. V. Tagliaferri, E. Prati, in Capacitance Spectroscopy of Semiconductors, 309, CRC Press, (2018).
Jirovec, A. Hofmann, A. Ballabio, P. M Mutter, G. Tavani, M. Botifoll, A. Crippa, J. Kukucka, O. Sagi, F. Martins, J. Saez-Mollejo, I. Prieto, M. Borovkov, J. Arbiol, D. Chrastina, G. Isella, and G. Katsaros, Nature Materials 20, 1106–1112 (2021).
“Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot”, Corna, L. Bourdet, R. Maurand, A. Crippa, D. Kotekar-Patil, H. Bohuslavskyi, R. Lavieville, L. Hutin, S. Barraud, X. Jehl, M. Vinet, S. De Franceschi, Y.-M. Niquet, and M. Sanquer, npj Quantum Inf. 4, 6 (2018).
“A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology”, L. V. Tagliaferri, A. Crippa, M. De Michielis, G. Mazzeo, M. Fanciulli, E. Prati, Phys. Lett. A, 380(11-12), 1205-1209 (2016).
Istituto Nanoscienze
Consiglio Nazionale delle Ricerche
PEC: protocollo.nano@pec.cnr.it
Partita IVA 02118311006
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phone +39 050 509418
fax +39 050 509550
Istituto Nanoscienze Consiglio Nazionale delle Ricerche
Piazza San Silvestro 12, I
56127 Pisa
phone +39 050 509525/418
fax +39 050 509550
via Campi 213/A, I
41125 Modena 7
phone +39 059 2055629
fax +39 059 2055651″
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