Speaker | Martin Bjergfelt |
Affiliation | Niels Bohr Institute, University of Copenhage, Denmark |
Date | 2019-03-28 |
Time | 11:30 |
Venue | Sala seminari NEST |
Host | Elia Strambini |
I present a shadow mask method for patterning the superconductor layer during deposition directly after VLS InAs nanowire growth. This allowed us to fabricate functional devices without need to develop specific etches and/or lithography techniques for each material. The method thus streamlines growth and fabrication while minimizing the risk of materials degradation during post-processing. We have demonstrated several key architectures including tunnel probes, Josephson Junctions and Majorana islands. These devices facilitated characterization of induced superconductivity properties in InAs nanowires, and provide insights into the requirements for obtaining a hard superconducting gap. Also of interest was the nanoscale superconducting properties of each material since the critical temperatures and critical magnetic fields differ strongly from bulk values. In particular, the materials we studied show dramatically increased out-of-plane critical field compared to aluminium, which is highly desirable for many proposed applications in topological superconductivity. The ability to fabricate devices based on a wide variety of interfaces broadens the scope for future applications of superconductor/semiconductor hybrid devices.
Elia Strambini - elia.strambini@nano.cnr.it
Istituto Nanoscienze
Consiglio Nazionale delle Ricerche
PEC: protocollo.nano@pec.cnr.it
Partita IVA 02118311006
Piazza San Silvestro 12
56127 Pisa, Italy
phone +39 050 509418
fax +39 050 509550
Istituto Nanoscienze Consiglio Nazionale delle Ricerche
Piazza San Silvestro 12, I
56127 Pisa
phone +39 050 509525/418
fax +39 050 509550
via Campi 213/A, I
41125 Modena 7
phone +39 059 2055629
fax +39 059 2055651″
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