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[Nest seminar] Emerging semiconductors for CMOS-integrated photonics  

Pisa - 13.10.2017 - [Nest seminar] Emerging semiconductors for CMOS-integrated photonics
Friday 13 October 2017 - 11:00 NEST Seminar room Speaker: Prof. Oussama Moutanabbir (Department of Engineering Physics, École Polytechnique de Montréal, Montréal, Québec, Canada) Title: Emerging semiconductors for CMOS-integrated photonics Abstract: The monolithic integration of photonic and optoelectronic devices operating beyond the visible spectrum on the mainstream CMOS platforms will create a wealth of opportunities in various technological sectors including high-speed data transmission, biosensing, environmental monitoring surveillance, night vision, building inspection, predictive inspection, automotive and maritime safety, and security, to name a few. However, this integration remains very challenging due to the lack of silicon-based monolithic light sources. To overcome the silicon indirect bandgap limitation, this presentation will discuss two strategies to achieve cost-effective silicon-compatible light sources. The first paradigm aims at exploiting the emerging group IV semiconductor low-dimensional structures and nanowires. These semiconductors consist of silicon-germanium-tin alloys, which provide more flexibility to independently engineer the bandgap and lattice parameter in a similar fashion to the more mature III-V semiconductors. The second paradigm focuses on developing a novel family of stable, non-zero bandgap, and large-area synthesized group V 2D materials such as antimonene and exploit their properties in scalable devices involving integration processes in the line with the current semiconductor technology. The presentation will address the epitaxial growth of these emerging materials on substrates compatible the industry standards. Atomistic-level insights into their structural properties and stability will also be discussed. Host: Stefan Heun


 


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